http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2205506-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d294b4d26df98813cba907fa33a16f31 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-115 |
| filingDate | 1996-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_921d77350b9f75e01d86949a3299ef9a |
| publicationDate | 1997-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-2205506-A1 |
| titleOfInvention | X-ray detector |
| abstract | A p-i-n semiconductor diode is provided that is useful for detecting X-ray radiation, wherein an i-type InGaN semiconductor layer (12) has a first surface portion (14) and a second surface portion, wherein a p-type semiconductor region (20) exists on this first surface portion (16), wherein an n-type semiconductor region (18) exists on this second surface portion (14), wherein a first electrical contact (24) is located on the p-type semiconductor region (20), and wherein a second electrical contact (24) is located on the n-type semiconductor region (18). In addition a multi-pixel X-ray detector array is provided wherein each pixel is constructed and arranged as stated above, and in which the above described first and second electrical contacts (24, 18) comprise the column and row pixel-interrogation conductors of the array. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110892291-A |
| priorityDate | 1996-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.