http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2178091-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_daa48ed820a7dad29affa51e58caf757 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-43 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
filingDate | 1995-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28a999b53181039c3d4e0afeabbd90c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e2667a112924f0f9beb3a4a399bb0c4 |
publicationDate | 1996-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CA-2178091-A1 |
titleOfInvention | Semiconductor device comprising a ferroelectric memory element with a lower electrode provided with an oxygen barrier |
abstract | The invention relates to a semiconductor device comprising a semiconductor body (3) with a semiconductor element (1) with an electrically conducting region (5) on which a capacitor (2) forming a memory element is present with a lower electrode (11), an oxidic ferroelectric dielectric (12), and an upper electrode (13), which lower electrode (11) makes electrical contact with the conducting region (5) and comprises a layer with a conductive metal oxide (112) and a layer (111) comprising platinum. The layer with the conductive metal oxide (112) acts as an oxygen barrier during manufacture. The invention also relates to a method of manufacturing such a semiconductor device. According to the invention, the device is characterized in that the layer comprising platinum (111) contains more than 15 atom % of a metal capable of forming a conductive metal oxide, and in that the layer (112) with the conductive metal oxide is present between the layer (111) comprising platinum and the ferroelectric dielectric (12). A good electrical contact between the lower electrode (11) and the conducting region (5) after manufacture is achieved thereby. |
priorityDate | 1994-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.