http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2176052-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2a48c672c1cd4fedc421729b14742e1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L1-183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0019 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01P15-0802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01P15-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L1-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L1-18 |
| filingDate | 1996-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e2c924b3cdf46170384120f6f8c45b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4e635c71af208e50c8a8e298cdaeea6 |
| publicationDate | 1996-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-2176052-A1 |
| titleOfInvention | Transducer having a resonating silicon beam and method for forming same |
| abstract | A method of forming apparatus including a force transducer on a silicon substrate having an upper surface, the silicon substrate including a dopant of one of the n-type or the p-type, the force transducer including a cavity having spaced end walls and a beam supported in the cavity, the beam extending between the end walls of the cavity, the method including the steps of: (a) implanting in the substrate a layer of a dopant of said one of the n-type or the p-type; (b) depositing an epitaxial layer on the upper surface of the substrate, the epitaxial layer including a dopant of the other of the n-type or the p-type; (c) implanting a pair of spaced sinkers through the epitaxial layer and into electrical connection with said layer, each of the sinkers including a dopant of the one of the n-type or the p-type; (d) anodizing the substrate to form porous silicon of the sinkers and the layer; (e) oxidizing the porous silicon to form silicon dioxide; and (f) etching the silicon dioxide to form the cavity and beam. |
| priorityDate | 1995-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.