http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2171781-C

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filingDate 1996-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08a2cab6938effa554c3a635a0aef400
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da92c1b66845e9cc87b0b4180561d565
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publicationDate 2005-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-2171781-C
titleOfInvention Semiconductor lasers comprising rare earth metal-doped diamond
abstract In general, the semiconductor laser device of the present invention comprises an emitting element comprising a doped diamond, which is doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal. The semiconductor laser device assembly according to the present invention comprises an emitting element of a doped diamond, which is a diamond doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal, and a thermal releasing element of a substantially undoped diamond, on which the semiconductor laser device are placed.
priorityDate 1995-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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