http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2131100-C
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G7-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G7-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-32 |
| filingDate | 1993-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93ca38ab89a2fc91aa0236b3e978b329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1f4daf0b11156bda2b447e2b4c946f0 |
| publicationDate | 1999-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-2131100-C |
| titleOfInvention | Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films |
| abstract | A ferroelectric memory and its method of making in which a highly c-axis oriented layer of ferroelectric lead zirconate titanate (PZT) is epitaxially deposited at between 640° and 710°C upon a crystalline film of yttrium barium copper oxide (YBCO), acting both as growth template and bottom electrode. A top electrode is formed over the ferroelectric layer to complete the memory element. The two electrodes are preferably composed of the same perovskite conductor of the same crystalline orientation, most preferably, .alpha.-axis oriented YBCO. The structure can be grown on a silicon substrate with an intermediate buffer layer of yttria-stabilized zirconia. The ferroelectric behavior is optimized if the structure is cooled from its growth temperature at about 20°C/min. Such a-axis oriented perovskite thin films can be grown by continuously depositing the same or different perovskite material, but dividing the deposition into three temperature stages, a first at a temperature favoring .alpha.-axis oriented growth, a second gradually increasing the temperature to a temperature favoring c-axis growth, and a third at the c-axis growth temperature. Nonetheless, a high-quality .alpha.-axis oriented film is grown. The memory can be rejuvenated after it has become fatigued by applying a pulse of magnitude equal to that of the writing pulse but of considerably longer duration. |
| priorityDate | 1992-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.