| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-927 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-72 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 |
| filingDate |
1993-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf0b025570a6fb2606a79aece5b79d0c |
| publicationDate |
1993-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2124843-A1 |
| titleOfInvention |
Bipolar junction transistor exhibiting suppressed kirk effect |
| abstract |
A bipolar junction transistor (BJT) which exhibits a suppressed Kirk Effect comprises a lightly-doped n-type collector region (11) formed above a more heavily-doped n+ layer (12). Directly above the collector is a p-type base which has an extrinsic region (17) disposed laterally about an intrinsic region (18). An n+ emitter (20) is positioned directly above the intrinsic base region. The BJT also includes a localized n+ region (15) disposed directly beneath the intrinsic base region which significantly increases the current handling capabilities of the transistor. |
| priorityDate |
1992-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |