| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S136-293 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03921
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-052 |
| filingDate |
1993-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1998-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a0f121b01608c27a44f2f54c2b32c2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d25428544d7d8d85222bd39a581ec526
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c2443758d5ae056b1d0eb073964c060
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f06c5defd85a3d10bff3bcdeb69f516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7741a0bda695a04ea5c7fffb686d7a52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a053bb5703995db2dc3556c8bb8151b0 |
| publicationDate |
1998-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2102948-C |
| titleOfInvention |
Photoelectric conversion element and power generation system using the same |
| abstract |
The present invention is directed to provide a photovoltaic element in which the open-circuit voltage and the carrier range of holes are improved by preventing the recombination of photoexcited carriers. The photovoltaic element composed of a p-type layer, an i-type layer of a lamination structure consisting of an i-type layer by RFPCVD on the p-type layer side and an i-type layer by microwave (µW) PCVD on the n-type layer side, or an i-type layer by microwave (µw) PCVD on the p-type layer side and an i-type layer by RFPCVD on the n-type layer side, characterized in that the i-type layer by µWPCVD is one formed by a µWPCVD in which a lower µW energy and a higher RF energy than µW energy to decompose source gas at 100% are simultaneously applied to a source gas containing Si and Ge at a pressure of 50mTorr or less, such that the minimum values of bandgap is biased toward the p-type layer side off the center of the i-type layer, and the i-type layer by RFPCVD is one formed 30nm thick or less by a RFPCVD using a source gas containing a silicon containing gas at a deposition rate of 2nm/sec or less. |
| priorityDate |
1992-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |