http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2059525-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa67eb74ea5b96d9f8f2cfdb3b025770 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00 |
| filingDate | 1990-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a27f78f52ac6ff853addea3365106c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2617226e5b3c96f92acf589164590f06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_993697b0c0dfc8e89778998047564f22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dd249ce137eae0014153e03653719b4 |
| publicationDate | 1991-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-2059525-A1 |
| titleOfInvention | Method of depositing optical oxide coatings at enhanced rates |
| abstract | A sputtering method is provided in which a substantially transparent target oxide film with predetermined optical properties is prepared having substantially the same degree of absorption per unit thickness as were the process practiced with pure oxygen gas as sole reactant, yet with a rate that is enhanced with respect to the method when oxygen gas is sole reactant. In practicing the inventive method, a target substrate is sputtered in a chamber while providing a source of reactive oxygen. The source of reactive oxygen has a reactivity in forming target oxide that is enhanced with respect to pure oxygen gas and includes nitrous oxide. Target oxide deposited on the substrate has an absorption per unit thickness that is substantially the same absorption per unit thickness as when pure oxygen gas is sole reactant. The deposition rate is preferably controlled by a value derived from plasma emission lines of oxygen atoms and target atoms. |
| priorityDate | 1989-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.