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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-14
filingDate 1991-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1997-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_822ea0d4f0e8fb20246e8a797058ac5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0459559e048d78c0cee19a9e9914e78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b13d0de7b966d8b85111f3f2a8f0037
publicationDate 1997-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-2052508-C
titleOfInvention Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
abstract For manufacturing a superconducting device, a first c-axis orientated oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. An .alpha.-axis orientated oxide superconductor thin film is grown, using the gate electrode as a mask, so that second and third superconducting regions having a relatively thick thickness are formed at both sides of the gate electrode, electrically isolated from the gate electrode. The superconducting device thus formed can functions as a super-FET.
priorityDate 1990-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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