| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb8efa277b88a39948a0bfb308eca4e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-5045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-50 |
| filingDate |
1991-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e253ad9daf41ac1ab373eaaa8df4883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7df5d3e0adffd6dfa57afef37c18270
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8633bf693e3fd4587bd217605112f57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a292850deeabcb584f630e2d0816764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a5da363acf4607a5f4f97ea642d6267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49dd39968393cd4e0be70e36d7db8477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69239d77ccc7bfc3d3bb80d80d2bec5f |
| publicationDate |
1991-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2040784-A1 |
| titleOfInvention |
Monolithically integrated semiconductor optical preamplifier |
| abstract |
MONOLITHICALLY INTEGRATED SEMICONDUCTOR OPTICAL PREAMPLIFIER Abstract An optical preamplifier includes a semiconductor optical amplifier monolithically integrated with an optical detector and electrically isolated from the detector by an isolation region. The isolation region consists of a low-loss, preferably transparent, insulating material whose index of refraction is matched to at least the refractive index of the amplifier, leading to reduced facet reflectivity at the amplifier output facet. Alter-native device structures may include a waveguiding layer in the isolation region, a grating integrated with or following the optical amplifier, and a tuning region positioned between the amplifier and isolation region for filtering spontaneous emission. |
| priorityDate |
1990-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |