| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27beebc60ddc2c273847d23df5767f19 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
1991-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1996-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c6e686cba6aad7a167c347dc23a1ae0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_847ec21e6e27c7c391015d5f1f271df6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ff8beca03a0a7f7d5212c7d64f280e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09ea43791269339767824da4ef605a17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7aee533f372dc49a2283cd1f551914dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ff8c5a29b049e1f233b41bde5f405a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e497373112144c7769ee3a6431633873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75eaeded53edb7b6a51e544cbe3f62b2 |
| publicationDate |
1996-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2034075-C |
| titleOfInvention |
Self-aligning contact and interconnect structure |
| abstract |
An MOS transistor for use in an integrated circuit, particularly CMOS integrated circuits, is fabricated with a self-aligning contact and interconnect structure which allows for higher packing density. Self-aligning source and drain contacts overlap the gate but are prevented from short circuiting to the gate by oxide insulation between the source/drain contacts and the gate, and a layer of silicon nitride above the gate. Contacts to the gate are made on top of the gate over the active region of the transistor because the source and drain regions are protected by a hardened layer of photoresist during etching of insulation to expose the gate contact. Source, drain and gate contacts are protected by a layer of titanium silicide so that interconnects are not required to completely cover these areas. Low resistance interconnects are formed of titanium silicide encapulated by a thin film of titanium nitride. |
| priorityDate |
1990-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |