http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2031636-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f3aee093c2b2d57b178d83579bbb565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f5726a6c480ea0e7a18ae31a7a8e9598 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0928 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 1990-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_023defb0311c971051f3f8f2e76d9346 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27030ad7b4ca7c5c24445dc152f758ff |
| publicationDate | 1991-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-2031636-A1 |
| titleOfInvention | Method of producing cmos transistor |
| abstract | ABSTRACT OF THE DISCLOSURE The method of producing a CMOS transistor device. A pair of device regions are formed and separated relation from each other by a field oxide film on a pair of corresponding well regions formed in a semiconductor substrate. A gate insulating film and a gate electrode are sequentially formed on each of the device regions. The gate insulating film is removed through a mask of the patterned gate electrode to expose a silicon active surface at least in one of the device regions. A diborane gas containing P type boron impurity is applied to the silicon active surface to form thereon a boron adsorption film. N type arsenic impurity is doped into the other device region by ion implantation to form N type source and drain regions while masking the one device region. The boron is diffused from the adsorption film into the one device region to form P type source and drain regions by annealing of the substrate. |
| priorityDate | 1989-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.