http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2020788-C

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-112
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C7-112
filingDate 1990-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1994-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71b3c849c04891e2561b64e8e7f0c901
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47be39b300c9355d13be3dcf397663fe
publicationDate 1994-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-2020788-C
titleOfInvention Process for manufacturing a voltage non-linear resistor and a zinc oxide material to be used therefor
abstract PROCESS FOR MANUFACTURING A VOLTAGE NON-LINEAR RESISTOR AND A ZINC OXIDE MATERIAL TO BE USED THEREFOR Abstract of the Disclosure A voltage non-linear resistor element mainly comprising ZnO, substantially free from internal defects, exhibiting an excellent current impulse withstand capability, can be manufactured by a process wherein an SiC inclusion in the starting ZnO powder is restricted to at most 10 ppm, preferably at most 0.1 ppm, by weight, whereby formation of closed pores in the element is prevented, which is otherwise caused by decomposition of considerable amount of SiC during firing. The starting ZnO powder has an average particle diameter (R) of 0.1-2.0 µm, preferably 0.3-0.8 µm, a particle size distribution within the range of between 0.5R and 2R, of at least 70%, preferably 80%, by weight, needle-like crystals of at most 20%, preferably at most 10%, by weight, and an SiC content as an impurity of at most 10 ppm, preferably at most 0.1 ppm, by weight.
priorityDate 1989-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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