| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8e6a13e4ae501eb40decf5732cf09c6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-925 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-38 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate |
1990-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1994-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2392cc7def54dc4e7656a14d93cfd7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57fae721f2706a01cf1852ff9f593a45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5444139640f3e2c44ff17cfb010b4af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_027436effa6b5ab2b3dc97df56853bd9 |
| publicationDate |
1994-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2018976-C |
| titleOfInvention |
Doping procedures for semiconductor devices |
| abstract |
DOPING PROCEDURES FOR SEMICONDUCTOR DEVICES Abstract A process is described for making semiconductor devices with highly controlled doping profiles. The process involves minimizing or eliminating segregation effects caused by surface electric fields created by Fermi-level pinning. These electric fields act on dopant ions and cause migration from the original deposition site of the dopant ions. Dopant ions are effectively shielded from the surface electric fields by illumination of the growth surfaces and by backgrounddoping. Also, certain crystallographic directions in certain semiconductors do not show Fermi-level pinning and lower growth temperatures retard or eliminate segregation effects. Devices are described which exhibit enhanced characteristics with highly accurate and other very narrow doping profiles. |
| priorityDate |
1989-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |