http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2017732-A1

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filingDate 1990-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69239d77ccc7bfc3d3bb80d80d2bec5f
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publicationDate 1990-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-2017732-A1
titleOfInvention Method for reducing facet reflectivities of semiconductor light sources and device thereof
abstract METHOD FOR REDUCING FACET REFLECTIVITIES OF SEMICONDUCTOR LIGHT SOURCES AND DEVICE THEREOF ABSTRACT A novel method for reducing the facet reflectivities of semiconductor light sources and amplifiers concerns the use of a bulk (non-waveguiding) index-matched regrown end cap region at both of the major facet surfaces of the amplifier. The amplifier has a tilted stripe geometry which, in combination with the end cap regions, enable the amplifier to reproducibly achieve facet reflectivities of less than 10-5 while avoiding a facet coating step. The improved optical amplifier is more amenable to mass production and less sensitive to both wavelength and polarization.
priorityDate 1989-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 22.