| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8e6a13e4ae501eb40decf5732cf09c6 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C3-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C3-064
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03B19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C3-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C3-064
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 |
| filingDate |
1987-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1993-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb45c19085ca5c646bc444cf638aae2a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f5d26364e2a3e8684072a37e53693cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b84d6c109bb82477956ac39d8be3e86f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc209e4baad3dbb375515ca31dc4f09e |
| publicationDate |
1993-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1321123-C |
| titleOfInvention |
Devices and device fabrication with borosilicate glass |
| abstract |
DEVICES AND DEVICE FABRICATION WITH BOROSILICATE GLASS Abstract Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have highsilica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices. |
| priorityDate |
1986-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |