| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0296
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
1988-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1993-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b710e33711771300fe2187ab87f60ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9789dd8a071d76f85cae51f235a318d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_779a7779aad3bc7cc5be5fa43a322389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5d476278bb8f163e7266faaee4c87d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cafbc50bb1fddd34e158e7117405f95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b739b096f786b1395946488de68b0b4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca110eb0b18751065fdb19f0d4ab4427 |
| publicationDate |
1993-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1320106-C |
| titleOfInvention |
Functional znse __te :h deposited film |
| abstract |
ABSTRACT OF THE DISCLOSURE An improved functional ZnSe1-xTex:H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe1-xTex:H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way. These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate. These films are suited for the preparation of a high functional device such as a photovoltatic element. |
| priorityDate |
1987-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |