http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1308594-C
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-72 |
| filingDate | 1987-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1992-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1efd6f768351fd7b67177287f1bd7d26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03e1d58175987cf73cac8edc25a95f5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aab5e4f899ea6f5f1505a04be8cd43f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5c97b0ee0428a4a967fe58112482d71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78ebd41b7d878a0149ab3fb979a92d41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b9ecc082750c592f75ccdff0db17b18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb0a112c7272be34963ca99f85d92d05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd7a6bf91c5e0ab9057f572c3e6fa4fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd23b1d95092db651b23ef43cae1fe47 |
| publicationDate | 1992-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-1308594-C |
| titleOfInvention | Thermally stable photoresists with high sensitivity |
| abstract | ABSTRACT OF THE DISCLOSURE The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160°C, and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160°C to about 250°C that they remain soluble in common lithographic developers and strippers. The present invention also discloses resists comprising substituted polyvinyl benzoates Which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer. |
| priorityDate | 1986-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 91.