| abstract |
SEMICONDUCTOR DEVICE ABSTRACT A semiconductor device, specifically an FET, having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi2, disposed therein. The rods form Schottky barriers with the semi-conductor material. A gate contact is made to several of the rods at one end, and source and drain contacts are made to the matrix of semiconductor material. Current flow in the semiconductor material of the matrix between the source and the drain is controlled by applying biasing potential to the gate contact to enlarge the depletion zones around the rods. |