| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_76108ecac8a34edd871befa67979d764 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate |
1987-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1991-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32e687cf115eeefa41d942c88acc5361
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a80c48c4388176a6af073608e0925882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_765414ff4918ade13d25e0056e03f05a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb864a8b4bad016332ff1a28ee13c22f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b86b349c3a916c90fb3409fe54f1a1b |
| publicationDate |
1991-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1286424-C |
| titleOfInvention |
Bilayer lithographic process |
| abstract |
BILAYER LITHOGRAPHIC PROCESS ABSTRACT A method for producing high resolution patterned resist images having excellent etch resistance and superior thermal and dimensional stability comprises the steps of: (a) forming a planarizing layer resistant to silicon uptake on a substrate, (b) providing a positive-working photoresist composition containing -OH or NH- groups over the planarizing layer, (c) imagewise exposing the resist to activating radiation, (d) developing the exposed resist, (e) contacting the developed resist with a vapor comprising a silicon-containing compound to effect silylation thereof and thereby impart etch resistance, the silicon-containing compound having the structural formula: wherein: x1 and x2 are individually chloro or wherein R3 and R4 are individually H or alkyl; and R and R2 are individually H or alkyl; and (f) contacting the planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof. |
| priorityDate |
1987-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |