http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1269719-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7f89970c28d596eafb92925976c3c80 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32247 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate | 1986-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1990-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f531ec8f8ecc29db74d1536798842e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b5e8c654bc4bbf0cb9f68c63ca8cd69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_677e577966b009b2a4f774f0a4b16a7a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7323323bd12588c63ac5b1587609f110 |
| publicationDate | 1990-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-1269719-A |
| titleOfInvention | Microwave apparatus for generating plasma afterglows for stripping semiconductor |
| abstract | ABSTRACT A microwave apparatus for generating plasma afterglows for stripping and/or etching of photoresist and semiconductor material at a sufficiently high rate to allow single wafer processing in a fully automated reactor. The apparatus includes a stripping/etching chamber for plasma afterglow stripping of photoresist and selective isotropic etching of semiconductor material, such as polysilicon and silicon nitride, using a variety of etchant compositions which form reactive species in a plasma. In addition, the apparatus may be employed for anisotropic etching for semiconductor material by decoupling etchant generation from ion production and acceleration by using two plasma sources, i.e., microwave power and radio frequency (RF) power. Anisotropic etching is carried out in an etching chamber which subjects, in situ, a plasma afterglow to RF power and which is designed to operate in the reactive ion etch mode. |
| priorityDate | 1985-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.