http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1265373-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e6e55331bee29fd74b0eefb194a54182 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-72 |
| filingDate | 1985-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1990-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89e3193a5567947cc57830ca9eb58d93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_579a94c3bfe7520191c015e310bd4820 |
| publicationDate | 1990-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-1265373-A |
| titleOfInvention | High contrast photoresist developer |
| abstract | ABSTRACT HIGH CONTRAST PHOTORESIST DEVELOPER A positive photoresist metal ion aqueous developer is provided that gives a high contrast to the photo-resist. The developer disclosed comprises a formulation of aqueous alkali-base such as potassium hydroxide and a carboxylated surfactant. The incorporation of the car-boxylated surfactant provides the unexpected increase in the contrast of the photoresist. The addition of the carboxylated surfactant increases the gamma from a typi-cal photoresist gamma (.gamma.) of 3 or less to a gamma greater than 5. The high contrast photoresist provides linewidth control and affords improved process latitude in photo-resist imaging. The linewidth control is particularly critical in cases where fine lines are to be defined in the resist that covers steps of topography on the coated substrate. The higher the contrast, the less affected the resist by the topography, provided the exposure is adequate to expose the resist. The process latitude afforded by the high contrast is a result of the ability to over develop (develop longer) the exposed resist without affecting the unexposed resist in the adjacent areas. |
| priorityDate | 1984-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.