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filingDate 1986-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1989-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cef9f95304f5393729e2c932858c3abe
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publicationDate 1989-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-1249073-A
titleOfInvention Integrated semiconductor circuit including a tantalum silicide diffusion barrier
abstract ABSTRACT OF THE DISCLOSURE An integrated semiconductor circuit consisting of a silicon substrate having an impurity doped circuit therein, and a layer of silicon dioxide formed on the substrate and having a contact hole therein overlying the circuit. An outer contact interconnect level composed of aluminum or an aluminum alloy provides electrical contact to the circuit. A tantalum disilicide diffusion barrier layer is disposed between the circuit and the interconnect level, with a layer of substantially pure tantalum both above and below the tantalum disilicide diffusion barrier layer.
priorityDate 1985-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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