http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1218956-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a7f1d2de15fa55f50c792fac17861388 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-978 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1986-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1987-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70d9ceab7cd88ba9e1f6c74e793cc91e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cce72749af90d65cc740a8dfdcc1741 |
| publicationDate | 1987-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-1218956-A |
| titleOfInvention | Process for plasma etching polysilicon to produce rounded profile islands |
| abstract | A PROCESS FOR PLASMA ETCHING POLYSILICON TO PRODUCE ROUNDED PROFILE ISLANDS Abstract of the Disclosure In a silicon integrated circuit manufacturing process a layer of polysilicon is ion implanted with an n-type dopant and etched through a mask with a fluorine:chlorine mixture. The etchant undercuts at the mask to an extent dependent on the ratio of chlorine:fluorine and on the dopant level. By appropriately selecting that ratio and dopant level, polysilicon islands having a rounded profile can be achieved, this being most efficacious for subsequent deposition onto the polysilicon. - i - |
| priorityDate | 1986-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.