| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b8b744d430e252fa21c14c2b8dee176 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B15-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-52 |
| filingDate |
1983-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1986-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59db8e79ba685e9a32864230e375be8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3301a45dada306707c35fe7834822757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a42e7a0bfe3753fbe4d9eec66047be3 |
| publicationDate |
1986-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1208806-A |
| titleOfInvention |
Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device |
| abstract |
ABSTRACT: A method of growing an alloy film by a layer-by-layer process on a substrate, and a method of mixing a semiconductor device in which an alloy film is grown on a substrate by a layer-by-layer process. The atomic ratio of constituents present in the alloy film is determined during growth of the film from the growth rates of the alloy film and of at least one intermediate film consisting of at least one constituent of the alloy, which intermediate film(s) is(are) grown between the alloy film and the substrate. During growth of each film, the growth surface is irradiated with a beam of electrons, and the period of oscillations in the intensity of the stream of electrons diffracted at the growth surface, or specularly reflected by the growth surface, or emitted from the growth surface, or of the current flowing to earth through the substrate. These periods are equal to the respective times taken to grow one monolayer of the respective film. |
| priorityDate |
1982-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |