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filingDate 1983-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1986-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7a0ed5c4b5d69d607dbfa0df95be7c3
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publicationDate 1986-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-1207069-A
titleOfInvention Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
abstract Abstract of the Disclosure This invention relates to a method and apparatus for detecting the location of shorting defects in thin film semiconductor layers. Thin film photovoltaic cells having a pair of semiconductor layers between opaque and a transparent electrical contacts are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device.
priorityDate 1982-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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