| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b5ee93d55e837563f1cc5509aca8042 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20 |
| filingDate |
1984-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1986-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_089998d4ea62abdcd1697d73e525fb99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95b8c48b0d8105d5174eaa897bbd7700 |
| publicationDate |
1986-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1206242-A |
| titleOfInvention |
Narrow band gap photovoltaic devices with enhanced open circuit voltage |
| abstract |
ABSTRACT A photovoltaic device having enhanced open circuit voltage includes a pair of oppositely doped layers between which an intrinsic type layer having two regions is disposed. The second intrinsic region has a wider band gap or lower density of defect states in the band gap, respectively, than that of the first intrinsic region. The second intrinsic region is disposed between the first intrinsic region and one of the doped regions and on the opposite side of the first region from the light incident surface of the device. |
| priorityDate |
1983-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |