| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-951
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-963
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-05 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
1982-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1986-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_402965449f9d60d832ea18441f12add4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e447285d983128c6feba6a88e23d1ed9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c720f69554407b76b2c9729c4611729
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95b7a475ebcfb111de9d8ed127f401e0 |
| publicationDate |
1986-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1204883-A |
| titleOfInvention |
Semiconductor device and manufacturing process thereof |
| abstract |
ABSTRACT OF THE DISCLOSURE A semiconductor device in which an insulator or conduc-tor film is closely deposited in a groove formed in a semicon-ductor substrate or an insulating or conductor layer thereon to planarize the surface thereof. A semiconductor device manufac-turing process in which a specimen is selectively etched away through using a resist pattern as a mask, a pattern forming film is deposited by a plasma deposition technique on the specimen, and the resist film is removed, whereby the pattern forming film fills up a groove formed by etching to provide a planarized surface. As the invention permits the deposition in a groove of a flat topped region which can be made coplanar with the upper surface of the substrate or layer carried on the substrate the overall height of the device can be kept small thereby increasing the packing density. |
| priorityDate |
1981-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |