http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1195437-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b157d8840310718acba426a46a513374 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-975 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-54453 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-544 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 |
filingDate | 1982-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1985-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfb7a40261dfb2a3764aee57253945f4 |
publicationDate | 1985-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CA-1195437-A |
titleOfInvention | Alignment target for electron-beam write system |
abstract | ABSTRACT An alignment target for an electron-beam direct write system is formed on a wafer of semiconductor material. First, a layer of silicon oxide is formed on a surface of the wafer. Then a layer of silicon nitride is formed on the oxide. Next, an opening is etched in the nitride layer to expose a surface portion of the oxide. The surface portion of the oxide is then etched to form a hole in the oxide. The hole is formed such that the oxide layer is undercut beneath the nitride layer such that a cantilevered nitride overhang is formed around the perimeter of the hole. A layer of aluminum is then deposited over the nitride layer. |
priorityDate | 1981-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.