http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1195437-A

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filingDate 1982-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1985-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfb7a40261dfb2a3764aee57253945f4
publicationDate 1985-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-1195437-A
titleOfInvention Alignment target for electron-beam write system
abstract ABSTRACT An alignment target for an electron-beam direct write system is formed on a wafer of semiconductor material. First, a layer of silicon oxide is formed on a surface of the wafer. Then a layer of silicon nitride is formed on the oxide. Next, an opening is etched in the nitride layer to expose a surface portion of the oxide. The surface portion of the oxide is then etched to form a hole in the oxide. The hole is formed such that the oxide layer is undercut beneath the nitride layer such that a cantilevered nitride overhang is formed around the perimeter of the hole. A layer of aluminum is then deposited over the nitride layer.
priorityDate 1981-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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