| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_76035ae831139ea53b9a1f87ca8868a0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03925
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate |
1983-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1985-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93ec3e2971168c28147f7093cd399677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11612a1cb00c2955b25f56086a8488be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_696469c34abe734ae6519ad96912ecff |
| publicationDate |
1985-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1188781-A |
| titleOfInvention |
Thin film heterojunction photovoltaic cells and methods of making the same |
| abstract |
THIN FILM HETEROJUNCTION PHOTOVOLTAIC CELLS AND METHODS OF MAKING THE SAME ABSTRACT OF THE DISCLOSURE A method of fabricating a thin film hetero-junction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250°C and 500°C for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention. |
| priorityDate |
1981-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |