| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b8b744d430e252fa21c14c2b8dee176 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
| filingDate |
1982-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1985-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b9e03046e34ce7533bc0eab612cc8b8 |
| publicationDate |
1985-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1183281-A |
| titleOfInvention |
Insulated gate field effect transistor |
| abstract |
ABSTRACT: "Insulated gate field effect transistor". Insulated gate field effect transistor having a surface zone (6) ("extended drain") adjoining the drain zone, said surface zone being of the same conductivity type as the drain zone but with lower doping. According to the invention the field effect transistor is provided in an epitaxial layer (3) which is present on a sub-strate (11) of the opposite conductivity type. Below the channel region (7) and the surface zone (6) a buried layer (12) of the same conductivity type as the epitaxial layer is present. Above the surface zone (6) a field plate (10) is provided, which field plate is preferably connected to the source electrode (4) or to the gate electrode (8) and is separated from the semiconductor surface by an insulating layer (13) having a thickness increasing in the direction of the drain zone. As a result of this the surface zone (6) is pinched off progressively and higher drain voltages are possible. The epitaxial layer (3) is preferably depleted by the RESURF principle. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5525819-A |
| priorityDate |
1981-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |