http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1179787-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e9ec95f75bc5dcc8f2c6f36fd3ee1ca6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7839 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66643 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28537 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate | 1981-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1984-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcfd4de41e9cc5ffa942ca6b7d338791 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_551fcf8b8dfd9eb4bee9725920f93522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f92cf7c7d063c1f0759e4f4be2b4eb5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77d5942ed21c31fc60c6b3d124d38507 |
| publicationDate | 1984-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-1179787-A |
| titleOfInvention | Method of fabricating a semiconductor device |
| abstract | ABSTRACT METHOD OF FABRICATING A SEMICONDUCTOR DEVICE A method for making a MOSFET device (20) in a semiconductor body (10) includes forming source and drain contact electrodes (12.1, 12.2) prior to growth of the gate oxide (10.3) and after formation of a high conductivity surface region. The exposed mutually opposing sidewall edges of each of the contact electrodes (12.1, 12.2) are coated with a sidewall silicon dioxide layer (15. 1, 15.2), and the exposed surface of the semiconductor body (10) between these sidewalls is then etched to separate the high conductivity surface region into the source and drain regions (10.1, 10.2). Formation and etching of the high conductivity region may be omitted by using Schottky barrier or impurity doped material for the contact electrodes (12.1, 12.2). |
| priorityDate | 1980-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.