http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1179071-A

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filingDate 1982-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1984-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_408b5fc78cd542977bc8a5efaa1b5c13
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publicationDate 1984-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-1179071-A
titleOfInvention Semiconductor device
abstract Abstract of the Disclosure A semiconductor device has a first semiconductor layer that contains substantially no impurity and a second semi-conductor layer that has a band gap greater than that of the first semiconductor layer and contains an impurity. An interface between these layers forms a heterojunction. At least one pair of electrodes are electronically connected with the first semiconductor layer, and the arrangement controls carriers developing at the heterojunction interface. The invention is characterized in that the first semi-conductor layer is a Ge layer, while the second semiconductor layer is a group III - V compound semiconductor layer. The result is a product with improved hole mobility.
priorityDate 1981-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.