| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b8b744d430e252fa21c14c2b8dee176 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C2523-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C2523-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C2523-745
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C2521-08 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C1-0445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J23-862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C1-044 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07B61-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J31-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C67-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J23-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J31-12 |
| filingDate |
1980-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1984-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfcd96599e4ab3271b78e49ead60dfaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c38cdd4a6439ee3ef5e54e1bd78e56a8 |
| publicationDate |
1984-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1173487-A |
| titleOfInvention |
Semiconductor cathode with avalanche breakdown pn junction |
| abstract |
ABSTRACT: The invention related to a semiconductor cathode and a camera tube and display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n juntion extending parallel to the surface of the semicon-ductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficeiny increase makes the manu-facture of such cathodes in planar silicon technology sensible. Since the depletion zone of the p-n junction upon avalanche breakdown does not emanate at the surface, the released electrons show a sharp energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays. |
| priorityDate |
1979-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |