http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1171175-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8c59891ee55f57f2e821d47b73a19d1e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C17-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-14 |
| filingDate | 1981-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1984-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b71d9f568827e720fe10022313aec8a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15741be1cd8145c5044e3a2f523fc8cb |
| publicationDate | 1984-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-1171175-A |
| titleOfInvention | Thermally reprogrammable memory array and a thermally reprogrammable memory cell therefor |
| abstract | Mo-2157 THERMALLY REPROGRAMMABLE MEMORY ARRAY AND A THERMALLY REPROGRAMMABLE MEMORY CELL THEREFOR ABSTRACT OF THE DISCLOSURE An electrically programmable memory cell comprises two terminals, a unidirectional and/or controllable semiconductor device having anode and cathode regions and a programmable resistor, said anode and cathode regions of the semiconductor device and the programmable resistor being connected in series between the terminals. The programmable resistor comprises a mixture of finely divided metallic material dispersed in a thermoplastic resin. The programmable resistor is initially substantially nonconductive (having a resistivity, for example, in excess of 1 mega ohms per cubic cm). By forcing a sufficient current through the terminals for a period of time, the resistance of the programmable resistor drops drastically to the extent that it may be considered a conductor having a resistivity, for example, of less than 100 ohms per cubic cm). The programmable resistor may be returned to its substantially nonconductive condition by heating to a temperature above which the memory cell is normally used and below which the semiconductor device is damaged. The semiconductor device may be a transistor, for example, a field effect transistor, a diode or the like. Mo-2157 |
| priorityDate | 1980-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.