http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1165899-A

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filingDate 1981-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1984-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cf1f24f85a6dc95a8bc3f1f3e0dbfa8
publicationDate 1984-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-1165899-A
titleOfInvention Lateral insulated gate field effect transistor device
abstract ABSTRACT: A lateral, for example, double-diffused DMOS insulated gate field effect transistor includes a field-shaping semiconductor layer which serves to improve the breakdown voltage and/or series resistance characteristics of the device. The field-shaping layer redistributes the electrical field strength in the device during operation in order to eliminate too large an electrical field strength in portions of the device where breakdown would otherwise first occur. The field shaping layer may be a buried layer, a surface layer, or a combination of a buried layer and a surface layer.
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Total number of triples: 26.