| abstract |
Abstract: The present invention relates to a photosensor. The photosensor has a metal electrode, at least one photo-electric conversion layer which overlies the metal electrode, and a transparent or partly transparent conductive layer which overlies the photoelectric conversion layer. A recombination layer is provided for recombining electrons and holes. This layer is disposed between the metal electrode and the photoelectric conversion layer. By disposing the recombination layer, the metal electrode having an insulating oxide film on its surface can be considered as if the insulating oxide film were non-existent The dark current is suppressed, and the photo-response is good. As the materials of the recombination layer, Sb2S3, As2Se3, As2S3, Sb2Se3 etc. are typical. |