http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1162033-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_28a869d6fc950d50f6df03f549ca3afa |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-501 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01F11-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-77 |
| filingDate | 1981-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1984-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf0935499786620fbce1c2fcc344bf79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f73ae73dfbc0e47cdefc4e293e14b0c0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fecc12016403af4b2a9a4647a4b4e96 |
| publicationDate | 1984-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-1162033-A |
| titleOfInvention | Process for removing sulfur dioxide from combustion exhaust gas |
| abstract | The economic feasibility of utilizing solar cell technology for significant portions of the present and prospective needs for replenishable, non-polluting energy sources would be enhanced if the overall cost of producing single crystal wafers of requisite purity could be reduced. A major area of interest, in this regard. relates to the development of a low-cost, continuous process for the production of high purity polycrystalline silicon from metallurgical grade silicon. The need for such low-cost, high purity silicon is increased by the continued expansion of the utilization of solid-state electronic devices. While the purity requirements for solar grade silicon are not as stringent as for semi-conductor or electronic applications, the highest purity silicon material available at economically feasible costs can be effectively utilized for either solar cell or electronic applications. The initial step of converting metallurgical silicon to trichlorosilane has commonly been carried out by reacting metallurgical grade silicon with HCl in a fluid bed reaction zone at about 300°C. Trichlorosilane com-prises about 85% of the resulting reaction mixture, which also contains silicon tetrachloride, dichlorosilane, polysilanes and metal halides. While this technique has been employed successfully in commercial practice, it requires the use of relatively large reaction vessels and the consumption of excess quantities of metallurgi-cal silicon. In addition, the reaction mixture is relatively difficult to handle and has associated waste disposal problems that contribute to the cost of the |
| priorityDate | 1980-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 77.