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filingDate 1981-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1983-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f1f9fb92a632ad6aa8e43c1dbcabb5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ec595a88d4484192fa781eff9664fe8
publicationDate 1983-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-1155326-A
titleOfInvention Process for forming a patterned resist mask using a developer containing an organic complexing agent and a transition metal ion
abstract Process for Forming a Patterned Resist Mask Abstract The performance of ethylene glycol alkylether de-velopers, for positive methacrylate-methacrylic acid copolymer and terpolymer resists, is controlled by add-ing an organic complexing agent, such as citric acid, or a combination of a transition metal salt and a com-plexing agent, such as ammonium citrate, to the de-veloper. The additives provide a consistent develop-ment rate, so that the maximum difference between the dissolution rates of the exposed and unexposed portions of the resist layer can be maintained, regardless of the developer purity.
priorityDate 1980-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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