| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0f087aa6d8c29a59ffae71650763130 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05B7-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate |
1980-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1983-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfd0134997b5aec27bda2c50d20d70df |
| publicationDate |
1983-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1146909-A |
| titleOfInvention |
Method and apparatus for forming films from vapors using a contained plasma source |
| abstract |
ABSTRACT OF THE DISCLOSURE Method for forming mixed oxide and/or nitride films upon the surface of an article by the use of a partially confined plasma-activated source. The plasma-activated source has a cavity in which an RF field is formed within the cavity to create a gas plasma in the cavity as gas is introduced into the cavity. The gas plasma is caused to exit from the cavity to impinge upon the surface of the article to be coated. At least one of the constituents of the film is selected as a compound vapor and is chemically reacted with at least one other constituent by utilization of the gas plasma to form the thin film on the surface of the article while the article is maintained at a low temperature. A chemical reaction takes place within the cavity itself and/or alternatively at the surface to be coated for the formation of the films. |
| priorityDate |
1979-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |