http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1138561-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0265 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1980-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1982-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f71c6ae1e49ad5fc5d7296fef343f33f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d859f9861a01011f9eeb0ee5c05d9639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de33d7fcad1211e1f336466d2a4662d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_408b5fc78cd542977bc8a5efaa1b5c13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c3b4450482e9744b319468f9c4d4399 |
| publicationDate | 1982-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-1138561-A |
| titleOfInvention | Semiconductor light emitting element and method for producing the same |
| abstract | ABSTRACT OF THE DISCLOSURE A semiconductor laser light emitting element com-prises a semiconductor substrate, a laminate region of semi-conductor layers having at least a first, a second and a third semiconductor layer formed over the substrate and having a p-n junction defined therein. The first and third semiconductor layers have smaller refractive indices and greater forbidden band gaps than the second semiconductor layer and are opposite in conductivity type to each other. Provided are on the substrate a field effect transistor section having first and second electrodes and a gate electrode disposed between the first and second electrodes, a first device for serving as an optical resonator for emitting light in the lengthwise direction of the p-n junction. A second device formed on one surface of the laminate region for injecting current into the third semiconductor layer, the current injecting device is short-circuited with the first electrode of the field effect transistor section and a third device is formed on the substrate for receiving the current injected from the current injecting device. |
| priorityDate | 1979-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450502002 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25516 |
Total number of triples: 25.