http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1132720-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72706c59aa36ea1d17991ff72dafaa2a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0288 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-749 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 1978-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1982-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2a5885a06caa0d2011a0d0d45e9d9b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66fb4427249e90ea34a88d7e67732be1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07a5524a3a4edcf8190e737cb1feaf3d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81167a4f3f9a9116204e33d4020f2ce9 |
| publicationDate | 1982-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-1132720-A |
| titleOfInvention | Two terminal field effect resistor |
| abstract | ABSTRACT OF THE INVENTION A bilateral, two terminal current limiting field effect resistor device that is relatively insensitive to both positive and negative input overvoltages. The disclosed field effect re-sistor device may be utilized to protect the integrity of the gate oxide capacitance of a metal-oxide-semiconductor (MOS) device. In a preferred embodiment, the field effect resistor device is fabri-cated with a n+n-n+ or p+p-p+ semiconductive layer deposited over an insulating (e.g. sapphire) substrate. By virtue of its unique structure the present field effect resistor device has a linear code of operation for low input voltages and a saturation mode of opera-tion for higher overvoltages. The invention described herein was made in the course of or under a contract or subcontract with the department of the United States Air Force. |
| priorityDate | 1977-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.