| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b157d8840310718acba426a46a513374 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 |
| filingDate |
1979-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1982-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b7d845098bcef6810d8c01af6e130ee |
| publicationDate |
1982-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1124408-A |
| titleOfInvention |
Method of producing a metal-semiconductor field-effect transistor |
| abstract |
Abstract A metal-semiconductor field-effect transistor is formed by pro-viding a blanket layer of the same conductivity type as the semiconductor body, with field oxide subsequently being grown, and with a region of opposite conductivity type being formed to extend partially under the field oxide, the initial blanket layer acting as the field implant region of the field-effect transistor. |
| priorityDate |
1978-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |