| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b5ee93d55e837563f1cc5509aca8042 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
1979-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1982-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4a6edf86b3d21044e889c9f1e5a6ab4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4a3f96a46c05b1383e074fea72c3aa9 |
| publicationDate |
1982-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1122687-A |
| titleOfInvention |
Amorphous semiconductors equivalent to crystalline semiconductors |
| abstract |
Abstract of the Disclosure A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises forming an amorphous semiconductor film, preferably by vaporizing silicon or the like in an evacuated space and condens-ing the same on a substrate in such space, and preferably at the same time, or subsequently, introducing one and preferably at least two or three compensating agents into the film, like activated hydrogen and fluorine, in amounts which substantially reduce or eliminate the localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell applications is obtained and dopants can be effectively added to produce p or n amorphous semiconductor films so that the films function like similar crystalline materials. |
| priorityDate |
1978-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |