| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-374
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-359
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-335 |
| filingDate |
1978-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1981-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b498221102d1f46829a86ee897dab98b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa6474fa5fc1a0cbe39fe3490b293ba1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44af33ecd5522df8a1ca09c3edcd4264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_962b40ec29294296ffa6e1f2ac8a2562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86498b5eabe2bdbc6cf99de1aef3076b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcff909ade66c56afe33fb2bedfd08bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_516cfb6c8ecae5ea6b8520d3bc8d9612 |
| publicationDate |
1981-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1111131-A |
| titleOfInvention |
Solid-state imaging device |
| abstract |
SOLID-STATE IMAGING DEVICE Abstract of the Disclosure A solid-state imaging device has a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors. These elements are all formed in a major surface region of an N (or P)-type semiconductor body. The device is characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body. The switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, and the vertical scanning circuit being integrated in still another impurity layer. Predetermined voltages are applied to electrodes disposed on the respective impurity layers. |
| priorityDate |
1977-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |