http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1084816-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e9ec95f75bc5dcc8f2c6f36fd3ee1ca6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31654 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02269 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1977-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1980-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e12b7bf06eb2ef640a58e71a74ed77b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_492fceb5a2a32189eb87cee08d49286a |
| publicationDate | 1980-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-1084816-A |
| titleOfInvention | Native growth of semiconductor oxide layers |
| abstract | NATIVE GROWTH OF SEMICONDUCTOR OXIDE LAYERS Abstract of the Disclosure An amorphous, stoichiometric, native, semiconductor oxide layer, with a sharp interface between the oxids layer and the substrate, is grown by directing electrons toward a semiconductor substrate in the presence of oxygen. The source of electrons may be a simple filament. This invention may be implemented with standard plasma growth techniques by extracting the electrons from the plasma production region and directing them to the substrate, - i - |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022160053-A1 |
| priorityDate | 1976-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.