http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1075369-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b8b744d430e252fa21c14c2b8dee176 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-70 |
filingDate | 1977-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1980-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b401077bcbbdb06a8a1faedd24e63f8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_060727bd57db9cc033567546b3608047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26c151688f89f54304ff1b205fb5363a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_add742f85720cb71b9ecaaf685e660af |
publicationDate | 1980-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CA-1075369-A |
titleOfInvention | Integrated circuit having complementary bipolar transistors |
abstract | ABSTRACT: An integrated circuit having two vertical complementary bipolar transistors formed from a semi-conductor substrate of a first conductivity type, and a deposited layer of second semiconductor type is dis-closed. Conductor tracks consisting of portions of the semiconductor layer are supported by a dielectric, while other portions of the semiconductor layer are used for the contacts for certain active zones for the transistors. |
priorityDate | 1977-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.