http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-1075369-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b8b744d430e252fa21c14c2b8dee176
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-70
filingDate 1977-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1980-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b401077bcbbdb06a8a1faedd24e63f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_060727bd57db9cc033567546b3608047
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publicationDate 1980-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-1075369-A
titleOfInvention Integrated circuit having complementary bipolar transistors
abstract ABSTRACT: An integrated circuit having two vertical complementary bipolar transistors formed from a semi-conductor substrate of a first conductivity type, and a deposited layer of second semiconductor type is dis-closed. Conductor tracks consisting of portions of the semiconductor layer are supported by a dielectric, while other portions of the semiconductor layer are used for the contacts for certain active zones for the transistors.
priorityDate 1977-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 21.