| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate |
1976-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1980-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87f2c5126d67a9be1bec195a6c128fb5 |
| publicationDate |
1980-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1074630-A |
| titleOfInvention |
Method of forming an oxide layer on a silicon substrate |
| abstract |
ABSTRACT OF THE DISCLOSURE A method of forming a silicon dioxide film on a silicon substrate without causing a stacking fault, having the steps of flowing over a silicon substrate a gaseous mixture contain-ing oxygen and trichloroethylene, and heating the substrate to a temperature of about 1,050 to 1,200°C. |
| priorityDate |
1975-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |