| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b8b744d430e252fa21c14c2b8dee176 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-182
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02 |
| filingDate |
1976-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1979-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_119f7f3d6fdd1d5ad35fc9deef2411c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38eee1f43f25179df6ea62c4e8073da8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8216d750bfb3915cf05d3c37d0885a99 |
| publicationDate |
1979-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-1047655-A |
| titleOfInvention |
Manufacture of semiconductor films made from the liquid phase |
| abstract |
ABSTRACT A method of, and device for, manufacturing semiconductor devices in which a layer of semiconductor material is provided on a main surface of a solid substrate by solidification of molten semiconductor material on the substrate surface. A substantially floating liquid mass of the semiconductor material is formed on a horizontal surface of a solid support and this liquid mass is contacted with a main surface, which surface is wettable by the liquid mass, of the solid substrate onto which the layer of semiconductor material is to be provided. The solid substrate has the form of a strip which is moved in its longitudinal direction along the liquid mass so that a liquid layer of semi-conductor material is formed on the strip and taken along with it. This liquid layer is then progressively solidified. |
| priorityDate |
1975-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |