| abstract |
REACTOR, INSTALLATION AND INDUSTRIAL PROCESS FOR CONTINUOUS PREPARATION OF HIGH PURITY SILICON TETRACLORIDE OR HIGH PURITY GERMAN TETRACLORIDE. The present invention relates to a reactor, an installation and a continuous industrial process carried out there for the preparation of high purity silicon tetrachloride or high purity germanium tetrachloride through treatment of silicon tetrachloride or germanium tetrachloride to be purified, which is contaminated by at least one compound containing hydrogen, by means of a cold plasma and isolating purified silicon tetrachloride or high purity germanium tetrachloride from the resulting phase treated by fractional distillation, where the treatment is carried out in a plasma reactor ( 4) in which the longitudinal axes of the dielectric (4.4), the high voltage electrode (4.3) and the grounded, metallic heat exchanger (4.2) are oriented parallel to each other and at the same time parallel to the force of gravity vector. |